FDFMA2P853
Manufacturer:
On Semiconductor
Mfr.Part #:
FDFMA2P853
Datasheet:
Description:
MOSFETs MicroFET-6 SMD/SMT P-Channel number of channels:1 1.4 W 20 V Continuous Drain Current (ID):3 A 6 nC
| Parameter | Value |
|---|---|
| Length | 2 mm |
| Width | 2 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 120 mΩ |
| Height | 750 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Weight | 0.04 g |
| Number of Elements | 1 |
| Lifecycle Status | EOL (Last Updated: 5 months ago) |
| Max Power Dissipation | 700 mW |
| Power Dissipation | 1.4 W |
| Number of Channels | 1 |
| Input capacitance | 435 pF |
| Collector Emitter Breakdown Voltage | 2 V |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 120 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Rise Time | 11 ns |
| Gate Charge | 6 nC |
| Drain to Source Resistance | 120 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | LIFETIME (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.3 V |
| FET Type(Transistor Polarity) | P-Channel |
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